tlh.4900 vishay semiconductors 1 (9) rev. a4, 04-oct-00 www.vishay.com document number 83009 high efficiency led in 3 mm clear package color type technology angle of half intensity high efficiency red tlhr4900 gaasp on gap 16 soft orange tlho4900 gaasp on gap 16 yellow tlhy4900 gaasp on gap 16 green tlhg4900 gap on gap 16 pure green tlhp4900 gap on gap 16 description the tlh.4900 series was developed for applications where high light output is required. it is housed in a 3 mm clear plastic package. the small viewing angle of these devices provides a high brightness. all leds are categorized in luminous intensity groups. the green and yellow leds are categorized additionally in wavelength groups. that allows users to assemble leds with uniform appearance. features choice of five bright colors standard 3 mm (t-1) package small mechanical tolerances suitable for dc and high peak current very small viewing angle luminous intensity categorized yellow and green color categorized 96 11675 applications status lights off / on indicator background illumination readout lights maintenance lights legend light absolute maximum ratings t amb = 25 c, unless otherwise specified tlhr4900 , tlho4900 , tlhy4900 , tlhg4900 , tlhp4900 parameter test conditions symbol value unit reverse voltage v r 6 v dc forward current t amb 60 c i f 30 ma surge forward current t p 10 s i fsm 1 a power dissipation t amb 60 c p v 100 mw junction temperature t j 100 c operating temperature range t amb 40 to +100 c storage temperature range t stg 55 to +100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ambient r thja 400 k/w
tlh.4900 vishay semiconductors 2 (9) rev. a4, 04-oct 00 www.vishay.com document number 83009 optical and electrical characteristics t amb = 25 c, unless otherwise specified high efficiency red ( tlhr4900 ) parameter test conditions type symbol min typ max unit luminous intensity 1) i f = 10 ma i v 6.3 13 mcd dominant wavelength i f = 10 ma d 612 625 nm peak wavelength i f = 10 ma p 635 nm angle of half intensity i f = 10 ma j + 16 deg forward voltage i f = 20 ma v f 2 3 v reverse voltage i r = 10 a v r 6 15 v junction capacitance v r = 0, f = 1 mhz c j 50 pf 1) in one packing unit i v min./ i v max. 0.5 soft orange ( tlho4900 ) parameter test conditions type symbol min typ max unit luminous intensity 1) i f = 10 ma i v 10 26 mcd dominant wavelength i f = 10 ma d 598 611 nm peak wavelength i f = 10 ma p 605 nm angle of half intensity i f = 10 ma j + 16 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 a v r 6 15 v junction capacitance v r = 0, f = 1 mhz c j 50 pf 1) in one packing unit i v min./ i v max. 0.5 yellow ( tlhy4900 ) parameter test conditions type symbol min typ max unit luminous intensity 1) i f = 10 ma i v 10 26 mcd dominant wavelength i f = 10 ma d 581 594 nm peak wavelength i f = 10 ma p 585 nm angle of half intensity i f = 10 ma j + 16 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 a v r 6 15 v junction capacitance v r = 0, f = 1 mhz c j 50 pf 1) in one packing unit i v min./ i v max. 0.5 green ( tlhg4900 ) parameter test conditions type symbol min typ max unit luminous intensity 1) i f = 10 ma i v 16 37 mcd dominant wavelength i f = 10 ma d 562 575 nm peak wavelength i f = 10 ma p 565 nm angle of half intensity i f = 10 ma j + 16 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 a v r 6 15 v junction capacitance v r = 0, f = 1 mhz c j 50 pf 1) in one packing unit i v min./ i v max. 0.5
tlh.4900 vishay semiconductors 3 (9) rev. a4, 04-oct-00 www.vishay.com document number 83009 pure green ( tlhp4900 ) parameter test conditions type symbol min typ max unit luminous intensity 1) i f = 10 ma i v 4 13 mcd dominant wavelength i f = 10 ma d 555 565 nm peak wavelength i f = 10 ma p 555 nm angle of half intensity i f = 10 ma j + 16 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 a v r 6 15 v junction capacitance v r = 0, f = 1 mhz c j 50 pf 1) in one packing unit i v min./ i v max. 0.5 typical characteristics (t amb = 25 c, unless otherwise specified) 020406080 0 25 50 75 100 125 p power dissipation ( mw ) v t amb ambient temperature ( 5 c ) 100 95 10904 figure 1. power dissipation vs. ambient temperature 0 10 20 30 40 60 020406080 i forward current ( ma ) f t amb ambient temperature ( 5 c ) 100 95 10905 50 figure 2. forward current vs. ambient temperature 0.01 0.1 1 10 1 10 100 1000 10000 t p pulse length ( ms ) 100 95 10047 i forward current ( ma ) f t p /t=0.01 0.02 0.05 0.1 0.2 1 0.5 t amb 65 5 c figure 3. forward current vs. pulse length 0.4 0.2 0 0.2 0.4 0.6 95 10044 0.6 0.9 0.8 0 5 30 5 10 5 20 5 40 5 50 5 60 5 70 5 80 5 0.7 1.0 i relative luminous intensity v rel figure 4. rel. luminous intensity vs. angular displacement
tlh.4900 vishay semiconductors 4 (9) rev. a4, 04-oct 00 www.vishay.com document number 83009 02468 0.1 1 10 100 1000 10 95 10026 v f forward voltage ( v ) i forward current ( ma ) f high efficiency red t p /t=0.001 t p =10 s figure 5. forward current vs. forward voltage 0 0 0.4 0.8 1.2 1.6 95 10027 20 40 60 80 100 i relative luminous intensity v rel t amb ambient temperature ( c ) high efficiency red i f =10ma figure 6. rel. luminous intensity vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10321 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i relative luminous intensity v rel 2.0 high efficiency red figure 7. rel. lumin. intensity vs. forw. current/duty cycle 110 0.01 0.1 1 10 i f forward current ( ma ) 100 95 10029 i relative luminous intensity v rel high efficiency red figure 8. relative luminous intensity vs. forward current 590 610 630 650 670 0 0.2 0.4 0.6 0.8 1.2 690 95 10040 i relative luminous intensity v rel wavelength ( nm ) 1.0 high efficiency red figure 9. relative luminous intensity vs. wavelength 01234 0.1 1 10 100 v f forward voltage ( v ) 5 95 9990 i forward current ( ma ) f soft orange figure 10. forward current vs. forward voltage
tlh.4900 vishay semiconductors 5 (9) rev. a4, 04-oct-00 www.vishay.com document number 83009 020406080 0 0.4 0.8 1.2 1.6 2.0 100 95 9994 i relative luminous intensity v rel t amb ambient temperature ( c ) soft orange figure 11. rel. luminous intensity vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10259 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i relative luminous intensity v rel 2.0 soft orange figure 12. rel. lumin. intensity vs. forw. current/duty cycle 110 0.01 0.1 1 10 i f forward current ( ma ) 100 95 9997 i relative luminous intensity v rel soft orange figure 13. relative luminous intensity vs. forward current 570 590 610 630 650 0 0.2 0.4 0.6 0.8 1.2 670 95 10324 1.0 i relative luminous intensity v rel wavelength ( nm ) soft orange figure 14. relative luminous intensity vs. wavelength 02468 0.1 1 10 100 1000 10 95 10030 v f forward voltage ( v ) i forward current ( ma ) f yellow t p /t=0.001 t p =10 s figure 15. rel. luminous intensity vs. ambient temperature 0 0 0.4 0.8 1.2 1.6 95 10031 20 40 60 80 100 i relative luminous intensity v rel t amb ambient temperature ( c ) yellow i f =10ma figure 16. rel. luminous intensity vs. ambient temperature
tlh.4900 vishay semiconductors 6 (9) rev. a4, 04-oct 00 www.vishay.com document number 83009 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10260 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i relative luminous intensity v rel 2.0 yellow figure 17. rel. lumin. intensity vs. forw. current/duty cycle 110 0.01 0.1 1 10 i f forward current ( ma ) 100 95 10033 i relative luminous intensity v rel yellow figure 18. relative luminous intensity vs. forward current 550 570 590 610 630 0 0.2 0.4 0.6 0.8 1.2 650 95 10039 i relative luminous intensity v rel wavelength ( nm ) 1.0 yellow figure 19. relative luminous intensity vs. wavelength 02468 0.1 1 10 100 1000 10 95 10034 v f forward voltage ( v ) i forward current ( ma ) f t p /t=0.001 t p =10 s green figure 20. forward current vs. forward voltage 0 0 0.4 0.8 1.2 1.6 95 10035 20 40 60 80 100 i relative luminous intensity v rel t amb ambient temperature ( c ) i f =10ma green figure 21. rel. luminous intensity vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10263 500 v rel 2.0 green i specific luminous intensity i f forward current ( ma ) figure 22. specific luminous intensity vs. forward current
tlh.4900 vishay semiconductors 7 (9) rev. a4, 04-oct-00 www.vishay.com document number 83009 110 0.01 0.1 1 10 i f forward current ( ma ) 100 95 10037 i relative luminous intensity v rel green figure 23. relative luminous intensity vs. forward current 520 540 560 580 600 0 0.2 0.4 0.6 0.8 1.2 620 95 10038 i relative luminous intensity v rel wavelength ( nm ) 1.0 green figure 24. relative luminous intensity vs. wavelength 01234 0.1 1 10 100 v f forward voltage ( v ) 5 95 9988 i forward current ( ma ) f pure green figure 25. forward current vs. forward voltage 020406080 0 0.4 0.8 1.2 1.6 2.0 100 95 9991 i relative luminous intensity v rel t amb ambient temperature ( c ) pure green figure 26. rel. luminous intensity vs. ambient temperature 95 10261 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 500 v rel 2.0 i specific luminous intensity i f forward current ( ma ) pure green figure 27. specific luminous intensity vs. forward current 110 0.01 0.1 1 10 i f forward current ( ma ) 100 95 9998 i relative luminous intensity v rel pure green figure 28. relative luminous intensity vs. forward current
tlh.4900 vishay semiconductors 8 (9) rev. a4, 04-oct 00 www.vishay.com document number 83009 500 520 540 560 580 0 0.2 0.4 0.6 0.8 1.2 600 95 10325 1.0 i relative luminous intensity v rel wavelength ( nm ) pure green figure 29. relative luminous intensity vs. wavelength dimensions in mm 95 10914
tlh.4900 vishay semiconductors 9 (9) rev. a4, 04-oct-00 www.vishay.com document number 83009 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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